چکیده مقاله
Germanium Tin Ge1 xSnx as a group IV material has a direct and small band gap for x > 0 11, which is attractive for the application in tunneling field effect transistor TFET In this work, the design of Ge1 xSnx TFET operating at low supply voltages is investigated by simulation Device simulation results show that Ge1 xSnx–based TFET can achieve high tunneling current and has potential for logic applications using sub 0 4 V supply voltage
کلیدواژهها
نویسندگان
Danial Keighobadi
Department of Electronic Engineering, Semnan university
Saeed Jafari
Department of Electronic Engineering, Imam Khomeini Naval University of Noshahr
Majid Eshagh Nimvari
Department of Electronic Engineering, Imam Khomeini Naval University of Noshahr
شیوه ارجاع
Keighobadi, Danial and Jafari, Saeed and Eshagh Nimvari, Majid,1395,Germanium Tin Double gate Nano Scale Tunnel Field Effect Transistors for logic application,4th National Congress of Electrical and Computer Engineering of Iran,Tehran
ارائهشده در
مجموعه مقالات چهارمین کنفرانس بین المللی مهندسی برق و کامپیوتر23 دی 1395 · تهران