چکیده مقاله
With down Scaling of MOSFET to nanometer dimensions, the OFF state leakage current Ioff increases exponentially due to the non scalability of threshold voltage since the Subthreshold Swing S is limited to 60mV/decade Steep Subthreshold Swing transistors based on Band to Band Tunneling BTBT are analyzed to improve the performance of the circuit for low power applications This review paper discuss about various structures and modeling of Tunnel Field Effect Transistor TFET which replaces CMOS for greater energy efficiency which is considered to be the most critical design parameter for ubiquitous and mobile computing systems
کلیدواژهها
نویسندگان
Saeid jafari
Department of electronic engineering Imam Khomeini Naval University of Noshahr Noshahr, Iran
Kavoos Sarkari
Department of electronic engineering Imam Khomeini Naval University of Noshahr Noshahr, Iran
مجید آقابابایی
Department of electronic engineering Imam Khomeini Naval University of Noshahr Noshahr, Iran
شیوه ارجاع
jafari, Saeid and Sarkari, Kavoos and Aghababaei, Majid,1395,Tunnel Field-Effect Transistors: Steeper Switching and Low off Current (IOFF) for Ultra Low Power Applications,4th National Congress of Electrical and Computer Engineering of Iran,Tehran
ارائهشده در
مجموعه مقالات چهارمین کنفرانس بین المللی مهندسی برق و کامپیوتر23 دی 1395 · تهران