چکیده مقاله
In this paper, we focus on designing and simulation of a Gallium nitride GaN semiconductor laser with Indium gallium nitride InGaN and Aluminium gallium nitride AlGaN We've used Indium gallium nitride material and Aluminium gallium nitride in the sides with the mole fraction of x AlxGa1 xN, InxGa1 xN For simulation we have used the SILVACO software of ATLAS simulator environment First, we review a structure similar to the laser and then to describe the materials used in the laser described above The results show good performance laser Went on to design another laser material will gallium arsenide
کلیدواژهها
نویسندگان
Mosayeb nouri
Department of Electrical Engineering , Behbahan Branch, Islamic Azad University, Behbahan, Iran
Gholamhosein moloudian
Department of Electrical Engineering , Behbahan Branch, Islamic Azad University, Behbahan, Iran
شیوه ارجاع
nouri, Mosayeb and moloudian, Gholamhosein,1395,Design and simulation of semiconductor laser with GaN & GaAS,2nd National Congress of Electrical and Computer Engineering of Iran,Ramsar
ارائهشده در
مجموعه مقالات دومین کنفرانس بین المللی یافته های نوین پژوهشی در مهندسی برق و علوم کامپیوتر24 اردیبهشت 1395 · رامسر