چکیده مقاله
In this paper, we propose the novel nanoscale vertical extended source tunnel field effect transistor TFET to simultaneously improve the on current and the average subthreshold swing and the immunity against the DIBL effects compared to a conventional TFET using calibrated simulations The proposed structure consist of a Si channel double gate TFET with a vertical extended p layer connected to the source region VES TFET The results of proposed structure show higher on current by more than a factor 1 5 in comparison with conventional TFET, and high ION/IOFF ratio about 1013 and an average subthreshold slope of about 11 mV/decade over 4 decades of current at room temperature The results suggest that, the TFET with vertical extended p layer connected to the source region can be implemented as a low power replacement for MOSFET
کلیدواژهها
نویسندگان
Saeid Marjani
Khorasan Regional Electrical Company, Mashhad
Mohamad Tolue Khayami
Khorasan Regional Electrical Company, Mashhad
شیوه ارجاع
Marjani, Saeid and Tolue Khayami, Mohamad,1399,Novel Nanoscale Vertical Extended Source Tunnel Field Effect Transistor,7th National Congress of New Findings of Iranian Electrical Engineering,Tehran
ارائهشده در
مجموعه مقالات هفتمین کنگره ملی تازه یافته های مهندسی برق ایران20 خرداد 1399 · تهران