چکیده مقاله
In this work, for the first time, the improved lasing performance of a blue GaN based laser diode is demonstrated by the introduction and vertical optimization of a new quadruple asymmetric waveguide structure In the new proposed waveguide structure, in the first step, p waveguide and electron blocking layers have been omitted Then a triple asymmetry was considered for the design of an AlGaNp cladding layer inside the waveguide structure The performances of the conventional and proposed laser structures were theoretically studied using the photonic integrated circuit simulator in 3D simulation software The 3deminsional simulations of carrier transport, optical wave guiding and self heating were combined self consistently in the software A good agreement was achieved between simulations and experiments by careful choice of different material parameters in the physical models The effects of the AlGaN p cladding layer composition on the performance of the new quadruple asymmetric waveguide GaN based laser were theoretically studied Threshold current, output power and operation voltage were compared for different composition of Al According to the simulation results, the optimized value of Al composition obtained high power performance The simulation results proved that the new quadruple asymmetric laser diode enhances the output power and slope efficiency It also decreases the threshold current
کلیدواژهها
نویسندگان
Zahra Danesh Kaftrudi
Department of Engineering Sciences, Faculty of Technology and Engineering East of Guilan , University of Guilan Rudsar, Iran
شیوه ارجاع
Danesh Kaftrudi, Zahra,1399,Optimization of p- cladding Composition in a new GaN-based blue laser diode with a quadruple asymmetric waveguide,7th National Congress of New Findings of Iranian Electrical Engineering,Tehran
ارائهشده در
مجموعه مقالات هفتمین کنگره ملی تازه یافته های مهندسی برق ایران20 خرداد 1399 · تهران