چکیده مقاله
In this study, for the first time, improved radiative recombination rates of a red AlGaInP laser diode are demonstrated by introducing a new extreme triple asymmetric waveguide structure Raditive and non radiative recombination rates of the conventional symmetric and the new extreme triple asymmetric laser structures are theoretically investigated using simulation software Photonic Integrated Circuit Simulator in 3 dimensions 3 dimensional simulations of carrier transport, optical wave guiding and self heating are combined self consistently in the software Numerical results show that when the ETAS structure is used, the stimulated recombination rate is remarkably increased and the device exhibits higher optical gain, a lower Auger recombination rate when compared with conventional symmetric structure The Spontaneous recombination and the SRH recombination also decreases So the new suggested structure controls effective recombination rates well
کلیدواژهها
نویسندگان
Zahra Danesh Kaftrudi
Department of Engineering Sciences, Faculty of Technology and Engineering East of Guilan , University of Guilan Rudsar, Iran
شیوه ارجاع
Danesh Kaftrudi, Zahra,1399,Performance Comparison of a Novel Extreme Triple Asymmetric AlGaInP Laser Diode with Conventional Symmetric Structure,7th National Congress of New Findings of Iranian Electrical Engineering,Tehran
ارائهشده در
مجموعه مقالات هفتمین کنگره ملی تازه یافته های مهندسی برق ایران20 خرداد 1399 · تهران