چکیده مقاله
To reduce recombination in the ETL layer ofperovskite solar cells, several methods are employed: surfacepassivation 30 40% improvement reduces trap states at theperovskite/ETL interface, improving charge extraction;improving ETL material quality 20 30% through bettercrystallinity and morphology decreases defects; optimizingenergy band alignment 10 20% ensures efficient electrontransfer, minimizing energy losses; adding an interfacial layer 10 15% between perovskite and ETL reduces directrecombination; and doping the ETL material 5 10% enhancesconductivity and reduces trap assisted recombination Thecombined use of these techniques can significantly enhance thecell's efficiency
کلیدواژهها
نویسندگان
Mehran Hosseeinzadeh Dizaj
PhD in ElectronicEngineeringFaculty of Electrical EngineeringIslamic Azad University, Central Tehran BranchTehran, Iran
Fatemeh Shahnavaz
PhD in Chemistry EngineeringFaculty of Chemistry EngineeringIslamic Azad University, Central Tehran BranchTehran, Iran
Shahed Chehrdoust Shishvan
PhD in Electronic EngineeringFaculty of Electrical EngineeringIslamic Azad University, Central Tehran BranchTehran, Iran
شیوه ارجاع
Hosseeinzadeh Dizaj, Mehran and Shahnavaz, Fatemeh and Chehrdoust Shishvan, Shahed,1403,Comparing the methods of reducing recombination inthe ETL layer of perovskite solar cells and calculatingthe efficiency of each of the methods and the method ofdoping the layer with SnO2,19th International Conference on Innovation and Research in Engineering Sciences (ICIRES)
ارائهشده در
مجموعه مقالات نوزدهمین کنفرانس بین المللی نوآوری و تحقیق در علوم مهندسی15 آذر 1403