چکیده مقاله
Nowadays, metal oxide semiconductors MOS are utilized extensively in the fabrication of inorganic, organic, and hybrid perovskite solar cells due to their abundance and non toxicity Cupric oxide CuO and cuprous oxide Cu2O are the two most common forms of MOS Cu2O and CuO are inherently p type as a result of copper vacancy defects Furthermore, Cu2O as a semiconductor material can demonstrate both n type or p type properties based on growth method and conditions In the current work, cuprous oxide p Cu2O nanoparticles have been successfully synthesized on copper foils by using thermal oxidation The grown thin films then were characterized using X ray diffraction XRD , scanning electron microscopy SEM and Energy dispersive X ray spectroscopy EDX The results are shown the growth of Cu2O nanoparticles with diameters of about 16 nm to about 57 nm using dry oxidation The average crystalline size of Cu2O thin films was observed is about 35nm Also, the results from EDX show high purity in the prepared Cu2O film
نویسندگان
Najme khezriyan
Electrical and Computer Engineering Faculty, Hakim Sabzevari University, Sabzevar, Iran Sabzevar, Iran
shahrokh Abadi
Electrical and Computer Engineering Faculty, Hakim Sabzevari University, Sabzevar, Iran Sabzevar, Iran
شیوه ارجاع
khezriyan, Najme and Abadi, shahrokh,1398,Characterization of Thermally Grown Cu2O Thin Films on Pure Copper Foil,International Conference on Innovation and Research in Engineering Sciences
ارائهشده در
مجموعه مقالات چهارمین کنفرانس بین المللی نوآوری وتحقیق در علوم مهندسی(ICIRES ۲۰۱۹)20 آبان 1398