چکیده مقاله
In this paper, the performance of a hetero junction mesfet alinas/gainas/alinas in DC bias zto be examined The performance of analyzed at different voltages Simulation and all results obtained is by using the software Silvaco Atlas This device uses a hetero junction structure and use of Schottky bonding at the gate that causes high switching speed used in circuits switching , The leakage current minimal Nearby to zero and can be neglected and the flow rate is high compared to the size device device has been designed with 135 nm technology and in the dimensions 0 6 1 µm The results obtained from the simulator was very acceptable For a closer look it can built and tested
نویسندگان
M.r ramezani
Department Electronic Engineering, Hkiim Sbzevari University,
m.h shahrokh abadi
Department Electronic Engineering, Hkiim Sbzevari University,
شیوه ارجاع
ramezani, M.r and shahrokh abadi, m.h,1397,Analyze Of Heterostructure MESFET IV-Characterization (AlInAs/GaInAs),The 4th International Conference on Science & Technology with Sustainable development approach,Shiraz
ارائهشده در
مجموعه مقالات چهارمین همایش بین المللی علوم و تکنولوژی با رویکرد توسعه پایدار30 خرداد 1397 · شیراز