چکیده مقاله
Effect of SiO2, La2O3, and TiO2 as the gate oxide on the electrical performance of Ga Sn O thin film transistor GTO TFT was investigated using ATLAS SILVACO® The device was simulated in a 2D environment and the ratio of the on to off state currents Ion/Ioff , subthreshold swing SS , saturation current and gate capacitance were studies The results showed that the TiO2/GTO TFT gives better electrical properties in terms of a larger Ion/Ioff, 2 73×1014, a smaller SS, 0 071 V/decade, a larger saturation current, 1 95×10 4 A, and a higher gate capacitance, 1 1×10 12 F/μm, compared to the La2O3/GTO and SiO2/GTO TFTs
کلیدواژهها
نویسندگان
Benyamin Golabgiran
Faculty of Electrical and Computer Engineering, Hakim Sabzevari University HSU Sabzevar, Iran
Ali Alizadeh
Faculty of Electrical and Computer Engineering, Hakim Sabzevari University HSU Sabzevar, Iran
M.H. Shahrokh Abadi
Faculty of Electrical and Computer Engineering, Hakim Sabzevari University HSU Sabzevar, Iran
شیوه ارجاع
Golabgiran, Benyamin and alizadeh, ali and Shahrokh Abadi, M.H.,1397,Effects of Gate Oxide Materials on the Electrical Performance of a Ga-Sn-O Thin Film Transistor,The 4th International Conference on Science & Technology with Sustainable development approach,Shiraz
ارائهشده در
مجموعه مقالات چهارمین همایش بین المللی علوم و تکنولوژی با رویکرد توسعه پایدار30 خرداد 1397 · شیراز