چکیده مقاله
In this paper focuses on the design of a MESFET with silvaco software About how to build a mesfet gallium arsenide with dimensions of 3 x 2 µm, the diffusion impurities and deposit required for the production of technology piece 1 µm Normally open channel MESFET and the voltage increases in the negative direction causing obstruction of the channel Importantly; the use of silicon as a material doping By adjusting the amount of energy; put in instead of gallium atoms or instead of arsenide atoms too All processes and simulation done at silvaco software part athena The problem is relatively high leakage current and large dimensions Finally, using the atlas to ensure working properly the functioning piece Due to limitations of the technology in iran ; objective design manufacturable device
کلیدواژهها
نویسندگان
M.r ramezani
Department Electronic Engineering, Hkiim Sbzevari University,
m.h shahrokh abadi
Department Electronic Engineering, Hkiim Sbzevari University,
شیوه ارجاع
ramezani, M.r and shahrokh abadi, m.h,1397,Simolition And Fabrication Gaas Mesfet By Silivica,The 4th International Conference on Science & Technology with Sustainable development approach,Shiraz
ارائهشده در
مجموعه مقالات چهارمین همایش بین المللی علوم و تکنولوژی با رویکرد توسعه پایدار30 خرداد 1397 · شیراز