چکیده مقاله
The influences of Ti, Mo, and Au as the source/drain electrodes on the electrical performance of an inverted– staggered Ga Sn O thin film transistor GTO TFT has been studied using ATLAS of SILVACO® To explain the electrical behavior of the transistor, the current voltage I V characteristics of the device have been simulated in termsof on/off current ratio Ion/Ioff , subthreshold swing SS , and saturation current Idssat By comparing various parameter of the device in presence of different S/D electrodes, it was found that the Ti S/D gives the largest Ion/Ioff of 1 9×10 7, the smallest SS of 0 351 V/decade, and the largest Ids,sat of 2 17×10 5 A, compared to the Mo and Au, indicates a good ohmic characteristics due to effective interfacial reaction between Ti and GTO semiconducting layer
کلیدواژهها
نویسندگان
Ali Alizadeh
Faculty of Electrical and Computer Engineering, Hakim Sabzevari University HSU Sabzevar, Iran
Benyamin Golabgiran
Faculty of Electrical and Computer Engineering, Hakim Sabzevari University HSU Sabzevar, Iran
M.H. Shahrokh Abadi
Faculty of Electrical and Computer Engineering, Hakim Sabzevari University HSU Sabzevar, Iran
شیوه ارجاع
alizadeh, ali and Golabgiran, Benyamin and Shahrokh Abadi, M.H.,1397,The effects of source/drain electrode materials on the electrical performance of the Ga-Sn-O thin film transistor,The 4th International Conference on Science & Technology with Sustainable development approach,Shiraz
ارائهشده در
مجموعه مقالات چهارمین همایش بین المللی علوم و تکنولوژی با رویکرد توسعه پایدار30 خرداد 1397 · شیراز