چکیده مقاله
The high thermal stability 730 810 nm AlGaAs/ AlGaAs quantum well lasers with symmetric waveguide structure are theoretically designed using simulation software PICS3D The simulator self consistently combines 3D simulation of carrier transport, self heating, and optical waveguiding Through the simulation, the optical and electrical performances of laser diodes with different quantum well structures are studied to increase thermal stability of the proposed device In this study, Al composition of AlxGa1−xAs, number and thickness of quantum well are varied, then the temperature and heat power distribution are investigated Numerical results confirm that the active region consists of 2 quantum wells with Al0 08Ga0 92As material compound and 5 nm thickness operates at the lowest temperature, so it is considered as the optimal structure
کلیدواژهها
نویسندگان
Zahra Danesh Kaftroudi
Department of Engineering Sciences, Faculty of Technology and Engineering East of Guilan, University of Guilan, Rudsar Vajargah, Iran;
شیوه ارجاع
Danesh Kaftroudi, Zahra,1398,Influence of Quantum Well Structure on Thermal Behavior of AlGaAs-Based Laser Diode,3rd International Conference on Soft Computing,Rudsar
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