چکیده مقاله
The high power and low threshold current 730 810 nm AlGaAs/ AlGaAs quantum well lasers with separate confinement heterostructures waveguide structure are theoretically designed using simulation software PICS3D The simulator self consistently combines 3D simulation of carrier transport, self heating, and optical waveguiding Through the simulation, the thermal performance of laser diodes with different quantum well structures are studied to increase output power and decrease threshold current of the proposed device In this study, Al composition of AlxGa1−xAs, number and thickness of quantum well are varied and the results are investigated Numerical results confirm that the active region consists of 2 quantum wells with Al0 08Ga0 92As material compound and 4 nm thicknesses can be considered as the optimal structure
کلیدواژهها
نویسندگان
Zahra Danesh Kaftroudi
Department of Engineering Sciences, Faculty of Technology and Engineering East of Guilan, University of Guilan, Rudsar Vajargah, Iran;
شیوه ارجاع
Danesh Kaftroudi, Zahra,1398,Optimization of Quantum Well Structure to Enhance Output Power for an AlGaAs-Based Laser Diode,3rd International Conference on Soft Computing,Rudsar
ارائهشده در
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