چکیده مقاله
In this paper, channel length changings are studied for Trigate SOI FinFET based on a 3 D simulation Changing channel length is between 10 to 100 nm output characteristics, threshold voltage, subthreshold slope and drain induced barrier lowering DIBL , gm, ro are investigated
کلیدواژهها
نویسندگان
B Fakhr
Department of Electrical Engineering, Neyshabur Branch ,Islamic Azad University Neyshabur ,Iran
S.E Hosseini
Electrical Engineering Department, Ferdowsi University of Mashhad, Mashhad, Iran,
شیوه ارجاع
Fakhr, B and Hosseini, S.E,1394,Study of a nano-Scale Length Tri-Gate FinFET Based on 3-D Simulations,International Conference on New Research Findings in Electrical Engineering and Computer Science,Tehran
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