چکیده مقاله
In this paper, for the first time, the effect of the hole etching depth on the heat sources of the active region in 1570 nm InGaAsP buried tunnel junction photonic crystal vertical cavity surface emitting laser BTJ PhC VCSEL is investigated and discussed The active region of BTJ PhC VCSEL includes from six quantum wells QWs with 5 5nm In0 76Ga0 24As0 82P0 18 and 8nm In0 48Ga0 52As0 82P0 18 as the well and barrier, respectively Also, the strain compensated InGaAsP multi quantum wells sandwiched between GaAs/AlGaAs and GaAs/AlAs distributed Bragg reflectors DBRs that are fused on both sides of the InP spacer This paper provides key results of the various elements of heat sourcesupon the hole etching depth, including the Joule heat power, the Peltier Thomson heat power and the recombination heat power Results suggest that, the increasing of the hole etching depth, decreases the Joule and Peltier Thompson heat powers however increases the recombination heat power into quantum wells region
کلیدواژهها
نویسندگان
Masoud Sabaghi
Photonics and Quantum Technologies Research School, Nuclear Science and Technology Research Institute NSTRI , Atomic Energy Organization of Iran AEOI , Tehran, Iran
شیوه ارجاع
Sabaghi, Masoud,1398,Investigation of Hole Etching Depth Effect on Buried Tunnel Junction Photonic Crystal VCSEL Heat Sources,Sixth National Congress on Electrical Engineering and Computer Engineering of Iran with a New Approach to New Energy,Tehran
ارائهشده در
مجموعه مقالات ششمین کنگره ملی تازه های مهندسی برق و کامپیوتر ایران با نگاه کاربردی بر انرژی های نو12 اردیبهشت 1398 · تهران