چکیده مقاله
In this paper, thermal analysis of optimal 1550 nm AlGaInAs multi quantum well MQW buried tunnel junction vertical cavity surface emitting lasers BTJ VCSELs were investigated with the aid of simulations For optimal design of devices with 6 nm diameter and 10 nm thickness for each layer of AlGaInAs BTJ, the slope efficiency of the devices decreases from 0 396 to 0 227 W/A over the temperature range of 290–380 K Results suggest that, the optimized AlGaInAs BTJ VCSELs enable simultaneously higher quantum tunneling probability, lower optical free carrierabsorption loss, lower threshold gain and highest operating temperature
کلیدواژهها
نویسندگان
Masoud Sabaghi
Photonics and Quantum Technologies Research School, Nuclear Science and Technology Research Institute NSTRI , Atomic Energy Organization of Iran AEOI , Tehran, Iran
شیوه ارجاع
Sabaghi, Masoud,1398,Thermal Analysis of an Optimal Buried-Tunnel-Junction-Based VCSELs at 1550 nm Wavelength,Sixth National Congress on Electrical Engineering and Computer Engineering of Iran with a New Approach to New Energy,Tehran
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