چکیده مقاله
In this paper, a novel silicon on insulator SOI metal–semiconductor field effect transistor MESFET with modified charge distribution is proposed Charge distribution changing goes to lower electric field crowding and increased breakdown voltage VBR For modifying charge distribution, additional region of silicon RS with doping level > 1020 cm−3 is utilized in buried oxide of the SOI MESFET In order to achieve the best results, the RS location and dimensions are optimized carefully DC and radio frequency characteristics of the SOI MESFET with RS RS SOI MESFET are analyzed by 2 D numerical simulation and compared with conventional SOI MESFET C SOI MESFET characteristics The simulation results show that the RS has excellent effects on the breakdown voltage of the device, which increases by 333 33% compared with that of the conventional SOI MESFET structure Also, drain current of the proposed structure increase slightly and the maximum output power density improves by 305 88% In addition, the RS causes the improvement of the device gains and frequency parameters Consequently, the novel SOI MESFET structure has superior electrical characteristics for high power and high speed applications compared with the similar device based on the conventional structure
کلیدواژهها
نویسندگان
Hadi Shahnazarisani
Electrical and Computer Engineering Department, Shahid Amini's Applied Science University, Tehran, Iran
Gholam A. Asghari
Electrical and Computer Engineering Department, Shahid Amini's Applied Science University, Tehran, Iran
شیوه ارجاع
Shahnazarisani, Hadi and Asghari, Gholam A.,1394,A novel high frequency and high breakdown voltage SOI MESFET by modified DC and radio frequency characteristics,International Conference on New Research Findings in Electrical Engineering and Computer Science,Tehran
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