چکیده مقاله
In this paper, the gain spectra due to exchange interaction and screening of the Coulomb correlation for the electron hole plasma in strained layer quantum wells InGaP/InGaAlP is studied as functions of carrier density and biaxial strain We solve the Luttinger–Kohn Hamiltonian in the k·p method considering valence band mixing to obtain the valence band structure for the holes Simulations are made in three steps At the first step, the valence bands of the mentioned structure are obtained by considering compressive strain in quantum wells and without stain It is found that the use of compressive strain leads to more separation between the valence bands In the next step, the dipole transition matrix elements of the compressive quantum wells are calculated for TE and TM modes According to the obtained results, it can be concluded that the heavy hole transition and the light hole transition has larger strength than the other transitions Finally, the free and many body gain spectra of quantum wells are determined The results impressively demonstrate that treatment of Coulomb collision effects is crucial, especially at low carrier density and when the accurate location of the peak gain is desired
کلیدواژهها
نویسندگان
z Danesh Kaftroudi
Department of Engineering sciences, Faculty of Technology and Engineering East of Guilan, University of Guilan, ۴۴۸۹۱ ۶۳۱۵۷, Rudsar Vajargah, Iran
a Mazandarani
Plasma& Nuclear Fusion Research School, Nuclear Science& Technology Research Institute, Tehran, Iran
شیوه ارجاع
Danesh Kaftroudi, z and Mazandarani, a,1396,MANY BODY OPTICAL PROPERTIES OF InGaP/InGaAlP QUANTUM WELLs for RED LASER DIODES,2rd International Conference on Soft Computing,Rudsar
ارائهشده در
مجموعه مقالات دومین کنفرانس ملی محاسبات نرم1 آذر 1396 · رودسر