چکیده مقاله
In the present work a Junction Less JL Cylendrical Double Surrounding gate CDSG metal oxide semiconductor field effect transistors MOSFETs with dual material gate DMG structure is proposed We intend to investigate the effect of channel length scaling on the device performance parameters, such as threshold voltage, Drain induced barrier lowering DIBL , and OFF state current IOFF We have simulated JL DM CDSG using Silvaco TAD tool The simulation is done using the Auger and Shockley Read Hall SRH recombination model, Concentration dependent mobility model CONMOB , CVT model, and standard Band to Band Tunneling model Also, due the doping concentration in JL is very high, the Band Gap Narrowing BGN model has been used 1 Simulation results indicate that the proposed JL DM CDSG has low OFF state current, DIBL, and ideal subthreshold swing SS
کلیدواژهها
نویسندگان
Mohammad tabarsi
Department of Electrical Engineering, Shahid Beheshti University, Tehran, Iran
Arash Yazdanpanah
Department of Electrical Engineering, Shahid Beheshti University, Tehran, Iran
شیوه ارجاع
tabarsi, Mohammad and Yazdanpanah, Arash,1396,Electrical Characteristics of a Novel Junction-Less Dual Material Cylindrical Double Surrounding Gate MOSFET (JL-DM-CDSG),Fifth International Conference on Electrical and Computer Engineering with Emphasis on Indigenous Knowledge,Tehran
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