چکیده مقاله
The GaAs based laser diode with single quantum well structure is theoretically designed and characterized using simulation software PICS3D The simulator self consistently combines 3D simulation of carrier transport, self heating, and optical waveguiding Simulation results show that proposed laser structure operates with multi mode optical fields at 0 833 0 834 micron wavelength range This situation is desirable for many optical systems
کلیدواژهها
نویسندگان
Zahra Danesh Kaftroudi
Department of Engineering Sciences, Faculty of Technology and Engineering East of Guilan, University of Guilan, Rudsar Vajargah, Iran;
شیوه ارجاع
Danesh Kaftroudi, Zahra,1400,Design and Characterization of Single Quantum Well GaAs-based Laser Diode,Fourth International Conference on Soft Computing
ارائهشده در
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