چکیده مقاله
The InP based laser diodes with asymmetric waveguide structure are theoretically designed using simulation software PICS3D The simulator self consistently combines 3D simulation of carrier transport, self heating, and optical waveguiding Through the simulation, behaviors oflaser diodes with different interlayer thicknesses are studied to determine the optimum thickness Simulation results show that the laser diode with 0 07 micron interlayer thick exhibits good operation conditions
کلیدواژهها
نویسندگان
Zahra Danesh Kaftroudi
Department of Engineering Sciences, Faculty of Technology and Engineering East of Guilan, University of Guilan, Rudsar Vajargah, Iran
Abolfazl Mazandarani
Plasma & Nuclear Fusion Research School, Nuclear Science& Technology Research Institute, Tehran, Iran
شیوه ارجاع
Danesh Kaftroudi, Zahra and Mazandarani, Abolfazl,1400,The Effect of Interlayer Thickness on The Asymmetric InP-based Laser Performance,Fourth International Conference on Soft Computing
ارائهشده در
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