چکیده مقاله
The design of heterostructures that exhibit desired strain characteristics is critical issue for the realization of semiconductor lasers with improved performance The work described in this article is a theoretical study of the strain compensation effect on the gain characteristics of a typical InP based multiple quantum well laser diode by using simulation software PICS3D The simulator self consistently combines 3D simulation of carrier transport, self heating, and optical wave guiding Valence band structures, relative transition strength, peak gain and gain spectrum are investigated theoretically Simulation results show that strain compensated barriers show better performance compared to conventional unstrained barriers
کلیدواژهها
نویسندگان
Zahra Danesh Kaftroudi
Department of Engineering Sciences, Faculty of Technology and Engineering East of Guilan, University ofGuilan, Rudsar Vajargah, Iran
شیوه ارجاع
Danesh Kaftroudi, Zahra,1402,Gain Characteristics of Strain Compensated Multiple Quantum Well Laser Diode Based on InP,5th International Conference on Software Computing,Rudsar
ارائهشده در
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