چکیده مقاله
RF power characteristics of a SOI MESFET were improved with a useful optimization of the simple structure Separate triple trenches are introduced to the proposed device to impact on the electrical performance The SOI MESFET with separate triple trenches TT SOI MESFET benefits from these trenches to disperse the potential lines leading to enhancement of RF power features In the other device, Modification of the potential profile occurs in the channel region and results in decrease in peak electric field Output power density is successfully boosted owing to improved driving current and breakdown voltage, simultaneously
کلیدواژهها
triple trenches RF power Driving current breakdownvoltage
نویسندگان
Mohammad K. Anvarifard
Department of Engineering Sciences, Faculty of Technology and Engineering, East of Guilan, University of Guilan,Iran,
شیوه ارجاع
Anvarifard, Mohammad K.,1402,The techniques for improvements of the Power Gain and Lattice Temperature,5th International Conference on Software Computing,Rudsar
ارائهشده در
مجموعه مقالات پنجمین کنفرانس بین المللی محاسبات نرم16 اسفند 1402 · رودسر